目次

2023年 2022年 2021年 2020年 2019年 2018年 2017年 2016年 2015年
2014年 2013年 2012年 2011年 2010年 2009年 2008年 2007年 2006年
2005年 2004年 2003年 2002年 2001年 2000年 1999年 1998年 1997年

2023年

Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing

M.Shimura, T. Shirasawa, R. Ushioda, K. Nakatsuji, H. Hirayama

Surf. Sci. 728, 122210 (7 pages) (2023).

Structural transition at the subsurface of few-layer Bi(110) film during the growth

T. Shirasawa, W. Voegeli, E. Arakawa, R. Ushioda, K. Nakatsuji, H. Hirayama

Phys. Rev. Mat. 7, 033404 (7 pages) (2023).

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2022年

Superconductivity in a two monolayer thick indium film on Si(111)√3×√3-B

T. Ogino, I. Seo, H. Tajiri, M. Nakatake, S. Takakura, Y. Sato, Y. Hasegawa, Y. Gohda, K. Nakatusji, H. Hirayama

Phys. Rev. B 106, 045423 (6 pages) (2022).

Bismuth Intercalation at the Graphene/Cu(111) Interfacewith [2012] Long-Range Ordering

T. Yamagami, T. Kasai, K. Nakatsuji and H. Hirayama

J. Phys. Soc. Jpn. Vol.91, 043601 (5 pages) (2022).

Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates

R. Ushioda, M. Shimura, K. Nakatsuji and H. Hirayama

Phys. Rev. Mat. Vol.6, p. 043403 (10 pages) (2022).

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2020年

Nucleation and growth of ultrathin Bi films

H. Hirayama

Adv. Phys. X, vol. 6, p.1845975 (21 pages) (2020).

Variation of the metal-insulator transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates

T. Ogino, V. M. Kuzumo, S. Yamazaki, K. Nakatsuji, and H. Hirayama

J. Phys.: Condens. Matter, Vol. 32, p. 415001 (8pp) (2020).

Effective quantum-well width of confined electrons in ultrathin Ag(111) islands on the Si(111)7x7 substrate

K. Sugawara, I. Seo, S. Yamazaki, K. Nakatsuji, Y. Gohda, H. Hirayama

Surface Science, Vol. 704, p. 121745 (6 pages) (2020).

Growth of extremely flat Bi(110) films on a Si(111)√3 × √3-B substrate

K. Nagase, R. Ushioda, K. Nakatsuji, T. Shirasawa, and H. Hirayama

Applied Physics Express, Vol. 13, p. 085506 (2020).

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2018年

Si(111)√3x√3-B基板上のAg(111)超薄膜のSTM像に現われる埋もれた界面構造

福元博之、吉池雄作、田尻寛男、山崎詩郎、中辻寛、平山博之

表面と真空誌　61, pp.657-662 (2018).

X-ray structural analysis of epitaxially grown Ag film/Si(111)√3x√3-B substrate interface

Y. Yoshiike, H. Tajiri, S. Yamazaki, K. Nakatsuji, H. Hirayama

Jpn. J. Appl. Phys. 57, 075701（8pages）(2018).

Structure and growth of Bi(110) islands on Si(111)√3x√3-B substrates

K. Nagase, I. Kokubo, S. Yamazaki, K. Nakatsuji, H. Hirayama

Physical Review B 97, 195418 (8pages) (2018).

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2017年

Interaction of Stark-shifted image potential states with quantum well states in ultra-thin Ag(111) films on Si(111)√3x√3-B substrates

K, Sugawara, K. Nagase, S. Yamazaki, K. Nakatsuji, H.Hirayama

Phys. Rev. B96 p.075444 (6 pages) (2017).

Size, Shape, and Number Density of Deposits in the Graphene Solution Liquid Droplet Method

Y. Takagi, S. Yamazaki, K. Nakatsuji, H. Hirayama

Materials Today Communications 13C, p.65-71 (2017)

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2016年

Si growth at graphene surfaces on 6H-SiC(0001) substrates

J. Sone, T. Yamagami, K. Nakatsuji, H. Hirayama

Jpn. J. Appl. Phys. 55, 035502 (2016).

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2015年

Ultra-thin Bi(110) films on Si(111)√3x√3-B substrates

I. Kokubo, Y. Yoshiike, K. Nakatsuji, H. Hirayama

Physical Review B91, 075429 (2015).

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2014年

Surfactant role of Ag atoms in the growth of Si layers on Si(111)√3x√3-Ag substrates

T. Yamagami, J. Sone, K. Nakatsuji, H. Hirayama

Applied Physics Letters, 105, pp.151603(1)-(4) (2014).

Epitaxial growth of silicene on ultra-thin Ag(111) films

J. Sone, T. Yamagami, Y. Aoki, K. Nakatsuji, H. Hirayama

New Journal of Physics, 16 (2014) 095004 (15 pages).

Regular ripples at the surfaces of heteroepitaxialy grown Ag(111) ultra-thin films on Si(111)√3x√3-B substrates

Y.Yoshiike,H.Fukumoto,I.Kokubo,Y.Aoki,K.Nakatsuji,H.Hirayama

Applied Physics Letters, 104、191605(1)-(4), (2014).

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2013年

Activation and splitting of carbon dioxide on the surface of an inorganic electride material

Y.Toda, H. Hirayama, A. Torrisi, N. Kuganathan, P. V. Sushko, H. Hosono

Nature Com.4, 2378 (2013)

Initial stage of Ag growth on Bi/Ag(111)√3x√3 surfaces

H. Fukumoto, M.Miyazaki,Y. Aoki, K.Nakatsuji and H. Hirayama

Surface Science 611, pp.49-53 (2013).

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2012年

【最新表面科学講座】固体表面の電子状態

平山博之、中辻寛

色材協会誌　Vol.85, ppp.25-32 (2012)

Decay of Shockley surface state by randomly adsorbed Bi atoms at Ag(111) surfaces

H. Fukumoto, Y. Aoki, and H. Hirayama

Physcal Review B 86, pp.165311(1)-(5) (2012)

Graphitization of boron predeposited 6H-SiC(0001) surface

Y. Okonogi, Y. Aoki, and H. Hirayama

Applied Surface Science, 261, pp.868-872, (2012)

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2011年

Quantum Interference of Rashba-type Spin-split Surface State Electrons

H. Hirayama, Y. Aoki, C. Kato

Physical Review Letters, 107, 0277204(1)-(4) (2011)

Hydrogen chemisorption on Si(111)√3×√3R30°-B passivated surface studied by thermal desorption and scanning tunneling microscopy

Y. Aoki and H. Hirayama

Surface Science, 605, pp.1394-1398 (2011)

Surface of Room-Temperature-Stable Electride[Ca₂₄Al₂₈O₆₄]⁴⁺(e^-)₄: Preparation and Atomic-Scale Charactreization by Scanning Tunneling Microscopy

Y. Toda, Y. Kubota, M. Hirano, H. Hirayama and H.Hosono

ACS Nano 5, pp.1907-1914 (2011)

「現代表面科学シリーズ」第5巻3.1節

平山博之

半導体、日本表面科学会編 共立出版

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2010年

Scanning Tunneling Microscope of Bi-induced Ag(111) Surface Structures

C. Kato, Y. Aoki, and H. Hirayama

Physical Review B, 82, pp.165407-1-7 (2010)

H adsorption at Ag/Si interfaces in epitaxially grown Ag(111) films on Si(111)7x7 Substrates

Y. Aoki, L. Shi, T. Sugimoto, and H. Hirayama

Surface Science 604, pp.420-423 (2010)

Dislocation-induced Local Modulation of the Surface States of Ag(111) Thin Films on Si(111)7x7 Substrates

K. Sawa, Y. Aoki, and H. Hirayama

Physical Review Letters 104, pp.016806(1)-(4) (2010)

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2009年

Hydrogen desorption from 6H-SiC(0001) surfaces during Graphitization

Y. Aoki, and H. Hirayama

Applied Physics Letters 95, 094103(1)-(3) (2009)

Thickness Dependence of Shockley-type Surface States of Ag(111) Ultra-thin Films on Si(111)7x7 substrates

K. Sawa, Y. Aoki, and H.Hirayama

Physical Review B 80, pp.035428(1)-(5) (2009)

Nanoscale Physics for Materials Science

T. Tsurumi, H. Hirayama, M. Vach, and T. Taniyama

CRS Press (Taylor & Francis) ISBN: 9781439800591

Growth of atomically flat ultra-thin Ag films on Si surfaces

H.Hirayama

Surface Science 603,pp.1492-1497(2009)

Scattering Potential Evaluation with S+P+D Wave Expansion of a Vacancy Complex on a Si(111)√3x√3-Ag Surface

S.Minamoto & H.Hirayama

Materials Science & Engineering B 161, pp.16-19 (2009)

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2008年

An STM study of Ge heteroepitaxial Growth on Si(111)√3x√3-B Surfaces

T.Sekiguchi & H.Hirayama

Surface Science 602,pp.3279-3283(2008)

Thickness- and Deposition Temperature-dependent Morphological Change in Electric Growth of Ultra-thin Ag Films on Si(111) Substrates

M.Miyazaki & H.Hirayama

Surface Science 602,pp.276-282(2008)

Electron Confinement in a STM-lithographed Nanoscale Domain on an Si(111)√3x√3-Ag Surface at Room Temperature

S.Minamoto,T.Ishiduka & H.Hirayama

Surface Science 602,pp.470-474(2008)

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2007年

Scattering of the S1-surface state electron by an isolated adatom at Si(111)√3 x √3-Ag surface

S.Minamoto,Y.Ogawa,Y.Sano & H.Hirayama

Physica E 40,pp.324-327(2007)

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2006年

Barrier Height Imaging of Si(111)3x1-Ag reconstructed surfaces

T.Furuhashi,Y.Ohshima,H.Hirayama

Applied Surface Science 253,pp.651-654(2006)

Two-photon Resonance in Optical Second Harmonic Generation From Quantum Well States in Ultra-thin Ag Films grown on Si(111) Surfaces

H.Hirayama & M.Watai

Surface Science 600, pp.3825-3829(2006)

Quantized electrical conductance of gold helical multishell nanowires

Y.Ohshima,K.Mouri,H.Hirayama,K.Takayanagi

J.Phys.Soc.Jpn.75,pp.053705-1-4(2006)

Size Control of Nano-structures by Quantum Confinement

H.Hirayama

Chapter 3-1 in "Nano-Materials Research Toward Applications" (ed. H.Hosono & Y.Mishima (2006) Elsevier Science Publisher)

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2005年

Resonant Optical Second Harmonic Generation From Quantum Well States in Ag Films on Si(111)7x7 Surfaces

M.Watai,H.Hirayama

Physical Review B72,pp.085435(1)-(5) (2005)

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2004年

Confinement of One-Dimensional Electrons in Dimer Row Segments at Ge/Si(001) Surfaces

H.Hirayama

Science & Technology of Advanced Materials vol.5,pp.517-520(2004)

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2003年

Change of Optical Second Harmonic Generation Intensity during Ag Deposition on Si(111)7x7 and Si(111)√3x√3-Ag Surfaces

H.Hirayama,A.Yamasaki,T.Kawata

Surface Science vol.532-535, pp.922-927(2003)

Development of a miniature STM holder for study of electronic conductance of Metal nanowires in UHV-TEM

Y.Ohshima,K.Mouri,H.Hirayama,K.Takayanagi

Surface Science vol.531,pp.209-216(2003)

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2002年

Influence of “1x1” defects on Schottky Barrier Height at the Ag/Si(111) Interfaces

H.Hirayama,T.Yamaguchi,H.Ikezawa,K.Tanaka

Physical Review B66, pp.073301(1)-(4)(2002)

Dimers at Ge/Si(001) surfaces: Ge-coverage dependent quenching, reactivation of flip-flop motion, and interaction with dimer vacancy lines

H.Hirayama,H.Mizuno,R.Yoshida

Physical Review B66, pp.165428(1)-(5) (2002)

Changes of phase and intensity of optical SHG with Ag deposition on Si(111)7x7 surface

H.Hirayama.T.Komizo,T.Kawata,K.Takayanagi

Applied Surface Science vol.190,pp.108-112（2002）

Evidence of a single-wall platinum nanotube

Y.Ohshima,H.Koizumi,K.Mouri,H.Hirayama,K.Takayanagi,Y.Kondo

Physical Review B65, pp.121401(R)1-4 (2002)

Commensurate and incommensurate striped structure of Ag film growth on Si(111)√3x√3 surface at room temperature

Y.Ohshima,H.Nakade,S.Shigeki,H.Hirayama,K.Takayanagi

Surface Science vol.498,pp.307-313(2002)

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2001年

Optical Second Harmonic Generation Spectrum from Ag/Si(111) Reconstructed Surface

H.Hirayama,T.Komizo,T.Kawata,K.Takayanagi

Physical Review B vol.63, pp.155413 1-6,(2001)

Atomic structure of cluster-ordered array on the Si(001) surface Induced by aluminum

Y.Ohshima,T.Hirata,T.Yokoyama,H.Hirayama,K.Takayanagi

Surface Science vol.465,pp.81-89(2001)

Nano-Spot-Welding of Carbon Nanotubes

H.Hirayama,Y.Kawamoto,Y.Ohshima,K.Takayanagi

Applied Physics Letters vol.79,pp.1169-1171(2001)

Face centered cubic indium nano-particles studied by UHV-transmissionElectron microscope

Y.Ohshima,T.Nangou,H.Hirayama,K.Takayanagi

Surface Science vol.476,pp.107-114(2001)

Oscillation of the optical second harmonic generation intensity During Ah thin film growth on an Si(111)7x7 surface

H.Hirayama,T.Kawata,K.Takayanagi

Physical Review B64,pp.195415 1-5(2001)

Nucleation of Ag nanodots at the Si(1 1 1)3×1-Ag surfaces

H.Hirayama,R.Horie,K.Takayanagi

Surface Science vol.482-485、pp.1277-1282（2001）

UHV-TEM/TED observation of Ag islands grown on Si(111)√３ｘ√3- Ag surface

Y.Ohshima,H.Nakade,S.Shigeki,H.Hirayama,K.Takayanagi

Surface Science vol.493,pp.366-372(2001)

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2000年

Chain-left isomer of the phi-bonded chain reconstruction at the Ge{111}2x1 Surface

H.Hirayama,N.Sugihara,K.Takayanagi

Physical Review B Vol.62,pp.6900-6903(2000)

Simultaneous STM and UHV electron microscope observation of silicon Nanowires extracted from Si(111) surface

Y.Naitoh,K.Takayanagi,Y.Ohshima,H.Hirayama

J.Electron Microscope vol.49,pp211-216 (2000)

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1999年

Growth of a single-wall carbon nanotube in the gap of Scanning Tunneling Microscope

J.Yamashita,H.Hirayama,Y.Ohshima & K.Takayanagi

Applied Physics Letters Vol.74, pp.2450-2452 (1999)

Initial stage of C₆₀ thin film growth at the YB₆₆(001) surfaces

K.Nakata,H.Hirayama & K.Takayanagi

Jpn.J.Appl.Phys. Vol.38, pp.4160-4163(1999)

Growth of high-density, small Ag islands on the Si(111)7x7 surfaces with adatom defects

H.Hirayama,H.Okamoto,K.Takayanagi

Physical Review B Vol.60,pp.14260-14264(1999)

Reconstruction of the Si(113) surface studied by TED

Ikeda,Y.Oshima,H.Hirayama & K.Takayanagi

Surface Science 443-435, pp.632-636(1999)

Simultaneous observation of scanning tunneling microscopy and reflection electron microscopy image of the Si(111)7×7 surface

Y.Naitoh,K.Takayanagi,H.Hirayama & Y.Ohshima

Surface Science 443-445,pp.627-631(1999)

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1998年

Formation and Healing of Defects at the Si(111) 7x7 Surfaces under Low Energy Ion Bombardment

A.Takashima,H.Hirayama & K.Takayanagi

Physical Review B vol.57, pp.7292-7298(1998)

Role of 2x1 Domain Boundaries on the Transition from 2x1 to c(2x8) at Ge(111) Surfaces

Y.Einaga,H.Hirayama & K.Takayanagi

Physical Review B vol.57, pp.15567-15571(1998)

Recent Development and Application of the XSTM

H.Hirayama,Y.Einaga,M.Koike & K.Takayanagi

Surface Review Letters Vol.5, pp.797-802(1998)

Scanning Tunneling Microscope Study on the {111} Cross Sectional Surface of Si/Ge Layered Material

M.Ohmori,H.Hirayama & K.Takayanagi

Physical Review B Vol.59, pp.5612-5616(1998)

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1997年

Cross Sectional Scanning Tunneling Microscope Study of Boron Implanted Si Wafer

H.Hirayama,M.Koike,Y.Einaga,A.Shibata & K.Takayanagi

Physical Review B Vol.56,pp.1948-1957(1997)

Structural Anomaly of Fine Bismuth particles observed Ultra-vacuum TEM

Y.Ohshima,H.Hirayama & K.Takayanagi

Z.Phys.D27 p.534-537(1997)

Scanning Tunneling Microscope Study of the c(2x8) Ordering in the "1x1" Phase on the Quenched Si(111) Surface

M.Koike,Y.Einaga,H.Hirayama & K.Takayanagi

Physical Review B Vol.55,pp.15444-15447(1997)